journal article·2019-09-01Open access

Enhancement of the refractive index modulation in a modulator based on GaAs/AlGaAs quantum wells

V V Zolotarev, I S Shashkin, V S Golovin, O S Soboleva, V V Shamakhov, S O Slipchenko, N A Pikhtin

Abstract

Abstract Approaches of optimization of coupled quantum wells with pronounced quantum-confined Stark effect in order to reach a high refractive index change are described. A numerical simulation was used to determine the optimal design parameters (quantum well width, barrier thickness and composition) based on GaAs/AlGaAs materials with two symmetric quantum wells, which provides the maximum modulation of the refractive index at a small absorption coefficient. It is demonstrated that, with the electric field strength varied within the range 0–20 kV cm −1 at an optical loss for interband absorption not exceeding 10 cm −1 , the refractive index can be changed by up to 0.0362.
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Research context

OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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