Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells
Source abstract
Abstract
Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Advanced Semiconductor Detectors and Materials
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