Enhancement of luminescence intensity induced by 1.06 µm excitation in InAs/GaAs quantum dots

We study the effect of additional below bandgap optical excitation 1 = 1.17 eV ( = 1.06 µm) on the photoluminescence of self-assembled InAs/GaAs quantum dots. We observe a relative increase of the photoluminescence intensity by up to 40%. The analysis of the experimental results is based on a model where a carrier is released from a deep trap as a result of a photoionization process.