Improvements in the electrical properties of indium oxide/p-InP and indium oxide/n-GaAs heterostructures formed at low reaction temperatures by rapid thermal annealing

Recently it has been observed that indium oxide/p-lnP and indium oxide/n-GaAs heterojunctions, where the indium oxide is prepared at lower reaction temperatures (<100 degrees C), have degraded electrical parameters. This has been attributed to the clustering of indium atoms at the interface. It is shown that rapid thermal annealing (600 degrees C, 20 s) improves electrical parameters of the contacts formed at lower reaction temperatures. The oxidation of GaAs and InP at lower reaction temperature and dissolution of oxidation products at higher annealing temperature and further oxidation of unoxidized indium atoms with the released oxygen atoms are used to explain the observations.