Rapid thermal annealing of Cu-In/Se stacked layers
Source abstract
Abstract
A rapid thermal annealing technique has been reported to prepare CuInSe2 films from Cu-In/Se stacked layers. A non-aqueous bath has been used to grow the Cu-In alloy films. Steady state polarization characteristics of the alloy plating bath are also discussed. From the XRD and SEM results, it is shown that the CuInSe2 films are polycrystalline and have a preferred (112) orientation of the chalcopyrite phase.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
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