Impact ionization breakdown of n-GaAs in high magnetic fields
Source abstract
Abstract
The influence of high magnetic field and its orientation on the impact ionization breakdown of n-type GaAs has been investigated experimentally. Hysteretic behaviour of current-voltage characteristics was observed for longitudinal magnetic field orientation to the current direction and no hysteresis was observed for transverse. The threshold voltage was much higher for transverse than for longitudinal magnetic field orientation to the current direction.
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Research context
OpenAlex topics: Radiation Effects in Electronics · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
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References (17)
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