Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation
Source abstract
Abstract
Abstract The temperature stability of high-density GaSb quantum dots grown on a Si(111) surface using solid-phase epitaxy is investigated during annealing at 450 °C. It is found that the bare silicon surface plays a critical role in the GaSb decomposition through the destruction of Sb–Ga bonds with the simultaneous formation of Sb–Si bonds. GaSb decomposition can be significantly suppressed if saturated monolayer coverage in the form of the Si(111)-(√3 × √3)-R30°-Sb surface reconstruction is preliminarily formed. This allows GaSb quantum dots to be embedded in the silicon matrix using molecular beam epitaxy at high temperature.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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