Photoconductivity saturation of AlGaAs:Si-a new criterion for negative U
Source abstract
Abstract
For heavily doped samples of AlxGa1-xAs:Si (x equivalent to 0.3) the persistent photoconductivity is limited by the finite height of the capture barrier. This effect allows the determination of the capture barrier. The result is compatible with literature data for the emission barrier only for a negative intra-atomic Hubbard correlation energy. Modelling shows that the thermal emission from the Si DX centre is a two-electron process.
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces · Electron and X-Ray Spectroscopy Techniques
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References (14)
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