The effect of quantum wells on the mobility of electrons in vertical transport

The mobility of electrons drifting in AlGaAs across GaAs quantum wells has been measured using the geometrical magnetoresistance (GMR) technique over the temperature range 77 to 300 K. The mobility is shown to be an oscillating function of well width and to reduce with decreasing period (barrier width plus well width). A theory of these effects is presented and is shown to give a good account of the phenomena.