Tunnel hole injection in unipolar HgCdTe-based laser diode

Abstract A p-doping free HgCdTe-based laser diode construction is suggested. Hole injection in the active region is made by carrier tunneling from valence to conduction band trough the resonance state formed in a series of quantum wells in external electric field. The charge carriers are localized in the active region by barrier layers with selective resonant tunneling: for holes on one side and for electrons on another one. Calculations of the resonant state providing interband tunneling are carried out.