Charge transport and accumulation in off-axis silicon

Electrical charge transport in a thin off-axis, sample of n-Si is considered within the framework of the phenomenological transport equations. A finite space charge is included through the use of Poisson's equation. In addition to calculating the sample transport coefficients for uniform electric fields applied in the principal directions, expressions are obtained for the space charge densities induced by these fields. The surface space charge density induced by a longitudinal applied field is found to be comparable in magnitude with that induced by a field applied normal to the sample surface.