High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy

High-performance visible compressively strained single quantum well laser diodes have been grown by solid source molecular beam epitaxy. The waveguide region was designed to have a low Al content in order to enhance the optical field confinement and to improve the material quality. The threshold current density for an infinity long cavity length was estimated to be . The highest external quantum efficiency of 37% per facet was obtained for a cavity length of 480 . A characteristic temperature of 130 K was measured in the temperature interval from to .