The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique

Abstract The ion-cutting technique offers a highly effective approach for the monolithic integration of InP and Si, which is crucial for advancing device applications in the realms of silicon photonics and high-frequency electronics. However, the ion-cutting process often introduces vacancies and defects that significantly degrade the electrical properties of the as-prepared InP thin films. In this work, we systematically investigated the impact of Si ion implantation on the electrical properties of InP thin films on Si(100) substrates through orthogonal experiments. The results reveal that the Si implantation dose is the dominant factor influencing both the carrier concentration and mobility of the ion-cut InP thin films with range values of carrier concentration and mobility of 6.12 × 10¹⁸ cm⁻³ and 448.89 cm² (V·s)^‒1, respectively. Specifically, an increase in implantation dose within a range from 1.47 × 10¹² cm⁻² (10 keV) and 2.94 × 10¹³ cm⁻² (45 keV) to 7.36 × 10¹³ cm⁻² (10 keV) and 1.25 × 10¹⁵ cm⁻² (45 keV) leads to a substantial enhancement in mobility from 221.18 cm² (V·s)^‒1 to 523.18 cm² (V·s)^‒1, while the carrier concentration decreases markedly from 7.20 × 10¹⁸ cm⁻³ to 1.58 × 10¹² cm⁻³. In contrast, annealing temperature and duration have relatively minor effects on carrier concentration and overall electrical properties. These findings provide valuable insights for optimizing the fabrication of InP thin film on Si structures and improving the performance of related devices.