Modulation-doped Si_xGe_1−x/Si shells electrically isolated from conductive substrates

Results on the formation of tubes and helices with micron and submicron radii of curvature formed from modulation-doped Si_xGe_1-x/Si heterostructures are presented. A novel technology allowing electrical isolation of 3D micro- and nanoshells from conductive substrates has been developed. The possibility of controlling the local curvature radius of submicron shells by means of electron beam irradiation is demonstrated, presenting a novel method of modifying electronic and transport properties of formed shells.