Investigation of process-induced crystal defects in Si by X-ray topography
Source abstract
Abstract
Thermal simulation of CMOS processing has been done. It was found that LPCVD Si3N4 layer deposition and subsequent thick oxide growth generate process-induced defects. These defects are demonstrated by double-crystal X-ray reflection topography.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
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