Inter-dot electron transport in coupled InAs quantum dots under a magnetic field
Source abstract
Abstract
We studied electrical transport properties of coupled InAs quantum dots (QDs) embedded in GaAs. A resonance peak in the current–voltage characteristics was observed in the low temperature region. When the magnetic field was applied, a linear shift of the resonance voltage was observed. As a result of the g-factor estimation, the resonance is attributed to the current corresponding to the electron transport through coupled InAs QDs. 1.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Semiconductor materials and devices
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References (8)
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