journal article·1996-02-01

The MOCVD Challenge. Vol 2: A survey of GaInAsP-GaAs for photonic and electronic device applications

P J Walker

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Abstract

Volume 2 of The MOCVD Challenge continues the detailed account of MOCVD started in the first volume. Again, the approach is very personal and highly selective. The book is strong, written with depth, and up to date in the areas in which the author has made a notable contribution. In other areas the tone is less assured, with recent work and developments being barely mentioned. The book is possibly trying to do too many things - to cover the basics of MOCVD growth and to cover the very large amount of literature on the properties of grown materials in the GaInAsP-GaAs area. The order of the chapters in this volume is somewhat strange. It is odd to cover the relatively recently developed in situ analytical techniques for MOCVD (chapter 3) in depth before the discussion of the basic growth parameters of GaAs (chapter 5).
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials

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