Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure

V Ya Aleshkin; A A Andronov; A V Antonov; V I Gavrilenko; D M Gaponova; Z F Krasil'nik; D G Revin; N Zvonkov; E A Uskova

doi:10.1088/0268-1242/15/11/307

journal article·2000-11-01

Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure

V Ya Aleshkin, A A Andronov, A V Antonov, V I Gavrilenko, D M Gaponova, Z F Krasil'nik, D G Revin, N Zvonkov, E A Uskova

Semiconductor Science and Technology· Volume 15· Issue 11

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Source abstract

Abstract

The symmetrical part of the hot hole distribution function in MQW In(0.21)Ga(0.79)As/GaAs heterostructure is obtained from the spectra of the modulation of the fundamental absorption by application of high electric field pulses.

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · ZnO doping and properties

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