A method of determining generation lifetime suitable for computer-aided measurement
Source abstract
Abstract
A new method of determining generation lifetime is suggested. By reading out several values of high-frequency MOS capacitance with equal time intervals from a capacitance-time transient curve of a pulsed MOS capacitor, the generation lifetime of minority carriers can be determined. This method involves straight line regression and is suitable for computer-aided measurement.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
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References (7)
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