Electronic excitation model for impurity-enhanced solid-phase epitaxy of amorphous silicon
Source abstract
Abstract
It is shown that a model of local electronic excitation around impurities is able to explain recent experimental data on impurity-enhanced solid-phase epitaxy of amorphous silicon.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. 10.1063/1.32340810.1063/1.323408 ↗
2. 10.1063/1.33122210.1063/1.331222 ↗
3. 10.1063/1.9911710.1063/1.99117 ↗
4. 10.1063/1.32340910.1063/1.323409 ↗
5. 10.1103/PhysRevLett.51.106910.1103/PhysRevLett.51.1069 ↗
6. 10.1063/1.33045710.1063/1.330457 ↗
7. 10.1007/BF0061777110.1007/BF00617771 ↗
8. 10.1016/0169-4332(89)90954-910.1016/0169-4332(89)90954-9 ↗
9. Wautelet M · Semicond. Sci. Technol. · 1988 · 3 · 5410.1088/0268-1242/3/1/009 ↗
10. Wautelet M · Phys. Status Solidi · 1988 · 149 · 46510.1002/pssb.2221490207 ↗