The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction material
Source abstract
Abstract
A method for the fabrication of sub-micron width mesas of GaAs/Ga1-xAlxAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
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