The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

Abstract Shallow impurities and excitons in MBE-grown quantum-sized semiconductor low-dimensional systems are studied within the fractional-dimensional space approach. We present calculations for shallow-donor states in GaAs–(Ga,Al)As quantum wells and superlattices and for excitons in GaAs–(Ga,Al)As quantum wells and symmetric-coupled double quantum wells. Effects of growth-direction applied magnetic fields are also considered. Results are shown to be in good agreement with previous variational calculations and available experimental measurements.