journal article·1995-12

Influence of base dopant out-diffusion into the emitter in heterojunction bipolar transistor using Monte Carlo simulations

Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice Hesto

Journal of Crystal Growth· Volume 157· Issue 1-4
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. Ishibashi · IEEE Trans. Electron. Devices · 1988 · ED-35
2. Crabbe · 1993
3. Galdin · J. Appl. Phys. · 1994 · 7510.1063/1.356193 ↗
4. Slotboom · IEEE Electron. Device Lett. · 1991 · 1210.1109/55.116926 ↗
5. Pruijmboom · IEEE Electron. Device Lett. · 1991 · 1210.1109/55.103606 ↗
6. Prinz · IEEE Electron. Device Lett. · 1991 · 12
7. Gruhle · IEEE Trans. Electron. Devices · 1994 · 4110.1109/16.277379 ↗
8. Dollfus · J. Appl. Phys. · 1993 · 7310.1063/1.353341 ↗
9. Krishnamurty · Appl. Phys. Lett. · 1985 · 47