Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation
Source abstract
Abstract
This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits. One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor (CMOS) device IDT6116, the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices. The results show that the L7805CV’s output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit. The demanded minimum interruption duration to avoid latch-up varies with dose rate, and this is confirmed by the experimental results.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Radiation Effects in Electronics · Electrostatic Discharge in Electronics · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
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