Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity
Source abstract
Abstract
In this paper, we report the parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu2O, CuO films and Cu/Cu2O, Cu2O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and optical testing results show that the obtained pure Cu film and Cu/Cu2O composite film both present an intriguing combination of metal and semiconductor characteristics.
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Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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