Controllable volatile-to-nonvolatile memristive switching in single-crystal lead-free double perovskite with ultralow switching electric field
Source abstract
Abstract
全无机无铅双钙钛矿由于其优异的电子传输能力、高光敏性、 低毒性和环境稳定性, 为电子/光电存储器件提供了潜在的材料. 然而, 钙钛矿薄膜的多晶性质严重限制了器件性能. 在此, 我们展示了一种基 于单晶双钙钛矿Cs2AgBiBr6的高性能忆阻器, 其具有6.67 × 104 V m−1的 超低开关电场和107的高电流开/关比. 值得注意的是, Cs2AgBiBr6的电 阻开关行为与单晶钙钛矿的厚度相关, 当单晶厚度从100到800 nm变化 时, 忆阻器从易失性的阈值开关行为演变为非易失性的忆阻开关行为. 元素分析表明, Cs2AgBiBr6中导电通道的形成与具有低活化能Br空位 的迁移有关. 此外, 形成的导电通道可以被具有不同波长和强度的光照 湮灭, 从而实现具有单独的电写入和光擦除的光电存储器. 我们的研究 结果为单晶钙钛矿中的离子迁移提供了深刻的见解, 并为其在未来的 电子和光电存储器中的应用提供了理论基础.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Perovskite Materials and Applications · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
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