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journal article·2016-08-01Open access

Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

Minh D. Nguyen, Evert P. Houwman, Matthijn Dekkers, Chi T. Q. Nguyen, Hung N. Vu, Guus Rijnders

APL Materials· Volume 4· Issue 8
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Source abstract

Abstract

Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Dielectric materials and actuators · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of Twente 1 MESA+ Institute for Nanotechnology, , P.O. Box 217, 7500AE Enschede, The Netherlands

Solmates B.V. 2 , Drienerlolaan 5, 7522NB Enschede, The Netherlands

Hanoi University of Science and Technology 3 International Training Institute for Materials Science, , Dai Co Viet 1, Hanoi 10000, Vietnam

Vietnam National University of Forestry 4 , Chuong My district, Hanoi 10000, Vietnam

Funding

NanoNextNL, a micro and nanotechnology consortium of the Government of the Netherlands and 130 partner · Vietnamese MOET Science and Technology Research Program

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