Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure

Among the various unique properties of two-dimensional materials, the ability to form a van der Waals (vdW) heterojunction between them is very valuable, as it offers a superior interface quality without the lattice mismatch problem. In this work, a ReS2/ReSe2 vdW heterostructure was fabricated, and its electrical and photovoltaic behaviors were discovered. The heterojunction showed a gate-tunable diode property with the maximum rectification ratio of 3150. Under illumination, it exhibited a photovoltaic effect with an efficiency of ∼0.5%. This study outlines the potential of Re-based 2D semiconductors and their integration by forming a vdW heterojunction for use in optoelectronic devices.