Large scale MoS ₂ nanosheet logic circuits integrated by photolithography on glass

We demonstrate 500. x. 500 mu m(2) large scale polygrain MoS2 nanosheets and field effect transistor (FET) circuits integrated using those nanosheets, which are initially grown on SiO2/p(+)-Si by chemical vapor deposition but transferred onto glass substrate to be patterned by photolithography. In fact, large scale growth of two-dimensional MoS2 and its conventional way of patterning for integrated devices have remained as one of the unresolved important issues. In the present study, we achieved maximum linear mobility of similar to 9 cm(2) V-1 s(-1) from single-domain MoS2 FET on SiO2/p(+)-Si substrate and 0.5 similar to 3.0 cm(2) V-1 s(-1) from large scale MoS2 sheet transferred onto glass. Such reduced mobility is attributed to the transfer process-induced wrinkles and crevices, domain boundaries, residue on MoS2, and loss of the back gate-charging effects that might exist due to SiO2/p(+)-Si substrate. Among 16 MoS2-based FETs, 13 devices successfully work (yield was more than 80%) producing NOT, NOR, and NAND logic circuits. Inverter (NOT gate) shows quite a high voltage gain over 12 at a supply voltage of 5 V, also displaying 60 mu s switching speed in kilohertz dynamics.