Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies
Source abstract
Abstract
The polarization properties of grating-gate GaN-based high electron mobility transistors in the mid-infrared region have been investigated. However, due to the lack of research on the absorption characteristics of double-channel (DC) HEMTs in the mid-infrared band, the application potential of GaN-based HEMTs is limited. Therefore, this paper studied the absorption spectra of single-channel (SC) and double-channel grating-gate GaN-based HEMTs at different gate lengths in the mid-infrared region by using the Drude and Lorentz dispersion to model the conductive channel and GaN layer. Variation of different gate lengths changes the duty cycle, which affects the plasmon polarization and phonon polarization intensities. Using the finite-difference time-domain (FDTD) method, it was indicated that the symmetrical and asymmetrical plasmons are induced by the surface polarization field. By changing different gate lengths and sheet electron densities, significant plasmonic enhancement effects can be observed in DC-HEMTs. These promising findings suggest that the DC-HEMTs can be used to design multi-channel mid-infrared detectors, multi-channel mid-infrared modulators, and other multi-channel devices in the future.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Terahertz technology and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Cumis MSD, Viciani S, Borri S, Patimisco P, Sampaolo A, Scamarcio G, Natale PD, Amato FD, Spagnolo V (2014) Widely-tunable mid-infrared fiber-coupled quartz-enhanced photoacoustic sensor for environmental monitoring. Opt Express 22:28222–28231. https://doi.org/10.1364/OE.22.02822210.1364/OE.22.028222 ↗
2. Huang K, Fang J, Yan M, Wu E, Zeng H (2022) Wide-field mid-infrared single-photon upconversion imaging. Nat Commun 13:1077. https://doi.org/10.1038/s41467-022-28716-810.1038/s41467-022-28716-8 ↗
3. Zhang Y, Yurdakul C, Devaux AJ, Wang L, Xu XG, Connor JH, Unlu MS, Cheng JX (2021) Vibrational spectroscopic detection of a single virus by mid-infrared photothermal microscopy. Anal Chem 93:4100–4107. https://doi.org/10.1021/acs.analchem.0c0533310.1021/acs.analchem.0c05333 ↗
4. Cai M, Liu H, Wang S, Wang Y, Wang D, Zhao D, Guo W (2022) Polarization properties in grating-gated AlN/GaN HEMTs at mid-infrared frequencies. Opt Express 30:14748–14758. https://doi.org/10.1364/OE.45399110.1364/OE.453991 ↗
5. Dyakonov M, Shur M (1993) Shallow water analogy for a ballistic field effect transistor: new mechanism of plasma wave generation by dc current. Phys Rev Lett 71:2465. https://doi.org/10.1103/PhysRevLett.71.246510.1103/PhysRevLett.71.2465 ↗
6. Wang L, Chen XS, Hu WD, Wang J, Wang J, Wang XD, Lu W (2011) The plasmonic resonant absorption in GaN double-channel high electron mobility transistors. Appl Phys Lett 99:063502. https://doi.org/10.1063/1.361984210.1063/1.3619842 ↗
7. Jakštas V, Grigelionis I, Janonis V, Valušis G, Kašalynas I, Seniutinas G, Juodkazis S, Prystawko P, Leszczyński M (2017) Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature. Appl Phys Lett 110:202101. https://doi.org/10.1063/1.498328610.1063/1.4983286 ↗
8. Yang A, Wei X, Shen W, Hu Y, Chen T, Wang H, Zhou J, Xing R, Zhang X, Yu G, Fan Y, Cai Y, Zeng Z, Zhang B (2023) Highly reliable temperature sensor based on p-GaN/AlGaN/GaN hybrid anode diode with wide operation temperature from 73 K to 573 K. Crystals 13:620. https://doi.org/10.3390/cryst1304062010.3390/cryst13040620 ↗
9. Hu W, Wang L, Chen X, Guo N, Miao J, Yu A, Lu W (2013) Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain. Opt Quantum Electron 45:713–720. https://doi.org/10.1007/s11082-013-9652-x10.1007/s11082-013-9652-x ↗
10. Wang L, Chen XS, Hu WD, Lu W (2012) Spectrum analysis of 2-D plasmon in GaN-based high electron mobility transistors. IEEE J Sel Top Quantum Electron 19:8400507–8400507. https://doi.org/10.1109/JSTQE.2012.218838110.1109/JSTQE.2012.2188381 ↗
11. Zhang Y, Qiao S, Liang S, Wu Z, Yang Z, Feng Z, Sun H, Zhou Y, Sun L, Chen Z (2015) Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure. Nano Lett 15:3501–3506. https://doi.org/10.1021/acs.nanolett.5b0086910.1021/acs.nanolett.5b00869 ↗
12. Ran J, Chen T, Hao H, Wen D, Zhang X, Ren Y (2022) Electrically controlled terahertz modulator with deep modulation and slow wave effect via a HEMT integrated metasurface. Opt Express 30:16134–16144. https://doi.org/10.1364/OE.45167710.1364/OE.451677 ↗
13. Yao Y, Shankar R, Kats MA, Song Y, Kong J, Loncar M, Capasso F (2014) Electrically tunable metasurface perfect absorbers for ultrathin mid-infrared optical modulators. Nano Lett 14:6526–6532. https://doi.org/10.1021/nl503104n10.1021/nl503104n ↗
14. Aizin G, Popov V, Polischuk O (2006) Plasmon enhanced electron drag and terahertz photoconductance in a grating-gated field-effect transistor with two-dimensional electron channel. Appl Phys Lett 89:143512. https://doi.org/10.1063/1.235883610.1063/1.2358836 ↗
15. Yu Y, Zheng Z, Qin H, Sun J, Huang Y, Li X, Zhang Z, Wu D, Cai Y, Zhang B (2018) Observation of terahertz plasmon and plasmon-polariton splitting in a grating-coupled AlGaN/GaN heterostructure. Opt Express 26:31794–31807. https://doi.org/10.1364/OE.26.03179410.1364/OE.26.031794 ↗
16. Chu R, Zhou Y, Liu J, Wang D, Chen KJ, Lau KM (2005) AlGaN-GaN double-channel HEMTs. IEEE Trans Electron Devices 52:438–446. https://doi.org/10.1109/TED.2005.84479110.1109/TED.2005.844791 ↗
17. Popov V, Polischuk O, Shur M (2005) Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer. J Appl Phys 98:033510. https://doi.org/10.1063/1.195489010.1063/1.1954890 ↗
18. Muravjov A, Veksler D, Popov V, Polischuk O, Pala N, Hu X, Gaska R, Saxena H, Peale R, Shur M (2010) Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures. Appl Phys Lett 96:042105. https://doi.org/10.1063/1.329201910.1063/1.3292019 ↗
19. Pashnev D, Korotyeyev VV, Jorudas J, Kaplas T, Janonis V, Urbanowicz A, Kašalynas I (2020) Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons. Appl Phys Lett 117:162101. https://doi.org/10.1063/5.002260010.1063/5.0022600 ↗
20. Fei T, Cheng T, Zhang L, Zhang J, Yang J-Y, Liu L (2022) Temperature-dependent infrared dielectric functions and hybrid phonon-polaritons in wurtzite GaN: a spectroscopic ellipsometry and multiscale simulation study. J Appl Phys 131:093102. https://doi.org/10.1063/5.008444710.1063/5.0084447 ↗
21. Guo H, Zhang X, Liu W, Yong A, Tang S (2009) Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations. J Appl Phys 106:063104. https://doi.org/10.1063/1.321296610.1063/1.3212966 ↗
22. Feng K, Streyer W, Islam S, Verma J, Jena D, Wasserman D, Hoffman AJ (2015) Localized surface phonon polariton resonances in polar gallium nitride. Appl Phys Lett 107:081108. https://doi.org/10.1063/1.321296610.1063/1.3212966 ↗
23. Barker A Jr, Ilegems M (1973) Infrared lattice vibrations and free-electron dispersion in GaN. Phys Rev B 7:743. https://doi.org/10.1103/PhysRevB.7.74310.1103/PhysRevB.7.743 ↗
24. Lynch DW, Hunter WR (1997). Comments on the optical constants of metals and an introduction to the data for several metals. In: Palik ED (ed) Handbook of Optical Constants of Solids, pp 275–367. https://doi.org/10.1016/B978-012544415-6.50015-710.1016/B978-012544415-6.50015-7 ↗
25. Shur M (1998) GaN based transistors for high power applications. Solid-State Electron 42:2131–2138. https://doi.org/10.1016/S0038-1101(98)00208-110.1016/S0038-1101(98)00208-1 ↗
26. Peralta XG, Allen SJ, Wanke MC, Harff NE, Simmons JA, Lilly MP, Reno JL, Burke PJ, Eisenstein JP (2002) Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors. Appl Phys Lett 81:1627–1629. https://doi.org/10.1063/1.149743310.1063/1.1497433 ↗
27. Cai M, Liu H, Wang S, Wang Y, Wang D, Su M (2023) Transmission properties of grating-gate GaN-based HEMTs under different incident angles in the mid-infrared region. Opt Express 30:45599–45611. https://doi.org/10.1364/OE.47774210.1364/OE.477742 ↗
28. Xing R, Wang H, Zhou J, Yang A, Li Y, Yu G, Zeng Z, Zhang X, Zhang B (2023). Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency. Opt. Eng 62: 065108. https://doi.org/10.1117/1.OE.62.6.06510810.1117/1.OE.62.6.065108 ↗