Controllable magnetic anisotropy and conductivity in ScCrSe3 monolayer driven by electrostatic doping

Above-room-temperature intrinsic ferromagnetism and superior transport property are critical for low-dimensional spintronic devices. Here, some main features of the ScCrSe ₃ monolayer and their changes under electrostatic doping are unveiled by means of the first-principles calculations and Monte Carlo simulations. The ScCrSe ₃ monolayer displays a feature of room-temperature ferromagnetic semiconductor with a Curie temperature of 350 K and an indirect bandgap of 2.13 eV. The magnetic anisotropy energy is 0.115 meV per unit cell. The Curie temperature above room-temperature increases with hole doping. The physical mechanism by which the easy magnetization axis of the ScCrSe ₃ monolayer undergoes a transition from in-plane to out-of-plane direction at a doping concentration of 0.2 holes per unit cell is discussed in detail. Moreover, the conductivity of spin-up and spin-down channels can be enhanced significantly under hole doping. Our results suggest that ScCrSe ₃ monolayer is a promising two-dimensional room-temperature ferromagnetic material with potential applications in low-dimensional spintronics.