journal article·2025-03Open access

Growth of rock-salt MgO–NiO–ZnO films: Relationship between lattice constant and composition

Shintarou Iida, Takumi Ikenoue, Masao Miyake, Tetsuji Hirato

Abstract

Deep-ultraviolet light-emitting diodes (DUV-LEDs) have emerged as eco-friendly alternatives to mercury lamps for various applications. This study explores MgO–NiO–ZnO alloy semiconductors as potential materials for DUV-LEDs, offering advantages over conventional AlGaN-based systems. MgO–NiO–ZnO films with varying compositions were grown using mist chemical vapor deposition (mist-CVD) and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, and UV–visible spectroscopy. A single-phase rock-salt structure was obtained for ZnO mole fractions of up to 0.26, whereas phase separation occurred at higher levels of ZnO content. The lattice constant–composition relationship followed Vegard’s law, suggesting that MgO–NiO–ZnO films with a composition of Mg x (Ni 0.67 Zn 0.33 ) 1− x O could achieve lattice matching with MgO substrates. The band gaps of rock-salt MgO–NiO–ZnO, determined based on spectral transmittance measurements, ranged from 5.4 eV to 5.8 eV and increased with MgO content. These band gap values are sufficient for DUV-LED applications. This study provides crucial insights into MgO–NiO–ZnO alloy semiconductors, paving the way for the development of more efficient and strain-free DUV-LEDs. • MgO–NiO–ZnO films of various compositions were grown via mist-CVD. • The maximum ZnO mole fraction of single-phase rock-salt MgO–NiO–ZnO films was 0.26. • The lattice constant of rock-salt MgO–NiO–ZnO followed Vegard’s law. • The band gap of rock-salt MgO–NiO–ZnO increased 5.4–5.8 eV with MgO content.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Transition Metal Oxide Nanomaterials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (29)

Show source-provided references
1. Far-UVC light: a new tool to control the spread of airborne-mediated microbial diseases10.1038/s41598-018-21058-w ↗
2. Far-UVC light (222 nm) efficiently and safely inactivates airborne human coronaviruses10.1038/s41598-020-67211-2 ↗
3. Kowalski · 2010
4. Epitaxially grown AlN and its optical band gap10.1063/1.1661876 ↗
5. The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process10.1063/1.90354 ↗
6. The band-gap bowing of AlxGa1−xN alloys10.1063/1.123339 ↗
7. Fundamental energy gap of GaN from photoluminescence excitation spectra10.1103/PhysRevB.10.676 ↗
8. AlGaN-based deep ultraviolet micro-LED emitting at 275 nm10.1364/OL.431933 ↗
9. A three-terminal light emitting and detecting diode10.1038/s41928-024-01142-y ↗
10. Unambiguously enhanced ultraviolet luminescence of algan wavy quantum well structures grown on large misoriented sapphire substrate10.1002/adfm.201905445 ↗
11. Consistent structural properties for AlN, GaN, and InN10.1103/PhysRevB.51.7866 ↗
12. Band gap bowing in NixMg1−xO10.1038/srep31230 ↗
13. Composition dependence of the lattice parameter in NicMg1−cO solid solutions10.1088/0953-8984/10/36/004 ↗
14. Lattice parameters of nine oxides and sulfides as a function of pressure10.1063/1.1726610 ↗
15. Optical properties and electronic structure of rock-salt ZnO under pressure10.1063/1.1591995 ↗
16. New high-pressure polymorph of zinc oxide10.1126/science.137.3534.993.a ↗
17. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides10.1107/S0567739476001551 ↗
18. Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO;2-O ↗
19. Electronic band structure of Al2O3, with comparison to Alon and AIN10.1111/j.1151-2916.1990.tb06541.x ↗
20. Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers10.1016/j.matlet.2017.06.003 ↗
21. Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O310.1103/PhysRevB.79.205211 ↗
22. Exciton spectra of CaO and MgO10.1103/PhysRevLett.22.1428 ↗
23. Electronic spectrum and ultraviolet optical properties of crystalline MgO10.1103/PhysRev.159.733 ↗
24. Transparent conducting p-type NiO thin films prepared by magnetron sputtering10.1016/0040-6090(93)90636-4 ↗
25. Structural, electronic and elastic properties of ZnO and CdO: a first-principles study10.1016/j.mspro.2014.07.394 ↗
26. Impact of local arrangement of Mg and Zn atoms in rocksalt-structured MgxZn1−xO alloys on bandgap and deep UV cathodoluminescence peak energies10.1063/1.5031174 ↗
27. Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads10.1063/1.1623923 ↗
28. Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films10.1063/1.1456266 ↗
29. Epitaxial growth of rocksalt Zn1−xMgxO on MgO (100) substrate by molecular beam epitaxy10.1016/j.jcrysgro.2017.01.023 ↗