Hexagonal ZnTiO3 single-crystalline films on α-Al2O3 substrates: Structural and photoelectric properties
Source abstract
Abstract
Hexagonal ZnTiO 3 ( h-ZnTiO 3) films with stoichiometric were deposited on α-Al 2O 3 substrates using pulsed laser deposition (PLD) method and post annealing process. The effect of oxygen partial pressure on Zn/Ti atomic ratio, as well as the influence of annealing treatment on the structural and optical properties of the films were investigated in detail. The optimum h-ZnTiO 3 film was deposited under 5 Pa oxygen partial pressure and annealed at 800°C, and it exhibited excellent crystalline quality and an optical band gap of 3.72 eV. A photodetector based on the film was fabricated, and its photoresponsivity was approximately 0.18 mA/W under 308 nm ultraviolet light irradiation. This demonstrates that as a wide bandgap semiconductor material, h-ZnTiO 3 has potential applications in the field of devices.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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