Large-scale free-standing Bi2Te3/Si heterostructures developed by a modified solvothermal method for a self-powered and efficient imaging photodetector
Source abstract
Abstract
Topological insulator bismuth telluride (Bi 2Te 3), an exotic state of quantum matter, has broad application prospects in next-generation optoelectronic devices. However, photoexcited carriers in Bi 2Te 3 usually relax rapidly due to the lack of a large band gap. Herein, high-quality Bi 2Te 3/Si heterojunction is successfully synthesized by a low-cost modified two-step solvothermal method to grow large-scale free-standing Bi 2Te 3 nanosheets on a Si substrate. Benefiting from the promotion of photogenerated carrier separation and transport by the built-in electric field at the Bi 2Te 3/Si heterojunction interface, the Bi 2Te 3/Si heterojunction photodetector exhibits a high responsivity of 16.44 mA W −1, a high specific detectivity of 2.44 × 10 11 Jones, and fast rise/recovery times of 11/13 ms under 470 nm illumination at zero bias. Additionally, the device has potential applications in high-resolution imaging. In view of its overall photosensitivity performance and low cost, the Bi 2Te 3/Si heterojunction synthesized by the solvothermal method has a promising application in fast broadband photodetectors, and also provide a new route for the growth of Bi 2Te 3 nanosheets on substrates.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · 2D Materials and Applications · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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