Light-absorber engineering induced defect passivation for efficient antimony triselenide solar cells
Source abstract
Abstract
Antimony selenide (Sb 2Se 3 ) has attracted considerable attention thanks to non-toxic, earth-abundant and exceptional optoelectrical properties. Post-selenization treatment is a widely used approach to improve crystallization and passivate defects for chalcogenide thin-film solar cells. The overall performance of the final device is often significantly affected by the process conditions. Herein, we have systematically explored the influence of selenization pressure on Sb 2Se 3 thin-film solar cells fabricated via sputtering and post-selenization. High-quality Sb 2Se 3 thin films without visible voids and blisters have been obtained at an optimized selenization pressure of 0.05 Pa. The optimized Sb 2Se 3 absorber thin film not only mitigates charge carrier recombination but optimizes the back contact of the device. Consequently, a remarkable efficiency of 7.42 % was obtained for the champion device, paving a simple and effective way to fabricate superior Sb 2Se 3 absorber thin films and highly efficient solar cells. This study is expected to give insights into post-selenization operating conditions for device efficiency enhancement and to further expand the commercial application of Sb 2Se 3 thin-film solar cells.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Silicon and Solar Cell Technologies · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
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