Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film
Source abstract
Abstract
Although two-dimensional electron gases have been realized in a number of semiconductor surfaces, examples of two-dimensional hole gases (2DHG) - the counterpart to 2DEG - are still very limited. Besides, owing to the deep energy level nature of potential dopants, achieving acceptor p-type β-Ga2O3 is a well-known challenge so far. In this work, we report what appears to be an exceptional p-type 2DHG surface on a Si-doped monoclinic (010) β-Ga2O3 crystal which otherwise is n-type in the bulk. The majority of the free carries at the surface have been determined to be holes with a sheet concentration of p ∼ 8.7 × 1013 cm−2 and a puzzlingly high mobility value of µh ∼ 80 cm2/(V·s) at room T.
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Research context
OpenAlex topics: Ga2O3 and related materials · Electronic and Structural Properties of Oxides · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
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