Air-stable ambipolar charge transport behaviors of organic-inorganic hybrid bilayer and application to Au nanoparticle-based floating gate memory

Ambipolar-based devices are considered effective alternatives in various applications, including reconfigurable logic, light-emitting transistors, and neuromorphic devices. On the other hand, the previously reported intrinsic single-layer ambipolar materials have limitations, such as high instability in ambient air and asymmetric transport of electrons and holes. In the present study, high air-stable and symmetrical ambipolar behavior were implemented using an organic-inorganic bilayer. An ambipolar-based memory application was implemented using these characteristics. This fabricated memory device used electrons and holes together with dinaphtho[2,3-b:2′,3′- f]thieno[3,2- b ]thiophene organic p-type and zinc tin oxide inorganic n-type semiconductor heterojunction layers, resulting in wide memory window and high retention. In addition, these behaviors were analyzed at the band diagram level through ultraviolet photoelectron spectroscopy and ultraviolet-visible light spectroscopy, and chemical bonding was analyzed using x-ray photoelectron spectroscopy. These reports can provide useful strategies for applying various ambipolar applications in the future.