Silicon distyryl-BODIPY hybrid photodiode: moving a step ahead from organic interface layer to type II band alignment
Source abstract
Abstract
Organic-inorganic heterojunctions are becoming an attractive topic of research for their applications in hybrid photodetectors, solar cells, resistive switching memory devices etc. The easy chemical synthesis and low-cost fabrication for organic thin films come with the benefit of high light absorptivity, high fluorescence quantum yield and band gap tunability along with high charge carrier lifetime that could be combined with the existing silicon-based technology. In this aspect, various organic dyes utilised as an interfacial layer with silicon Schottky junction are reported earlier. However, the photo responses are quite limited. Here, in this report, a Type II Silicon/Distyryl-BODIPY p-n junction has been proposed as an organic-inorganic hybrid photodetector which has not been explored extensively yet. The transformation from a mere organic interfacial layer to band aligned junction enhances the charge carrier separation providing higher photo-responsive behaviour. With the simple spin-coating technique, the Distyryl-BODIPY derivative with phenolic functionalities is coated to fabricate the p-n junction diode. To further improve the performance, pyramidal surface texturization on silicon is deployed using wet chemical etching that supplements the light absorption with internal reflections. Both the devices have been investigated for their photo-response characteristic where a high photo-responsivity of 4353 A W −1 is attained for the textured device as compared to 118 A W −1 for the planar silicon device at a − 3 V bias with an ultra-high specific detectivity of 10 12 Jones and 10 10 Jones respectively. The behaviours of interfacial states have been demonstrated using the capacitance (C), conductance (G) and series resistance (R S ) vs voltage (V) curves at different frequencies. Further calculations of interfacial state density revealed the existence of 1000 times higher interfacial states in planar device leading to lower performance as compared to pyramidal device. The findings in this report suggest that dye-based organic-inorganic heterostructures find potential applications in photodetectors and other optoelectronic devices.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Nanowire Synthesis and Applications · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (67)
Show source-provided references
1. Large-area low-noise flexible organic photodiodes for detecting faint visible light10.1126/science.aba2624 ↗
2. Nanostructures/graphene/silicon junction‐based high‐performance photodetection systems: progress, challenges, and future trends10.1002/admi.202202208 ↗
3. Surface engineering in SnO2/Si for high-performance broadband photodetectors10.1021/acsami.2c20073 ↗
4. Optimizing performance of silicon-based p–n junction photodetectors by the piezo-phototronic effect10.1021/nn506427p ↗
5. Temperature dependent current-voltage characteristics of Au/n-Si schottky barrier diodes and the effect of transition metal oxides as an interface layer10.1016/j.physb.2017.10.068 ↗
6. The current–voltage characteristics of V2O5/n-Si schottky diodes formed with different metals
7. MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 Nm infrared photodetector10.1016/j.apsusc.2022.154485 ↗
8. Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral schottky diodes with tin oxide interface layer
9. Silver nanowires assisted porous silicon for high photodetector sensitivity using surface plasmonic phenomena10.1016/j.sna.2022.113942 ↗
10. Nanoscale ultraviolet photodetectors based on onedimensional metal oxide nanostructures10.1007/s12274-014-0661-2 ↗
11. Sensitive silicon nanowire ultraviolet B photodetector induced by leakage mode resonances10.1021/acsami.2c04606 ↗
12. High-performance silicon-compatible large-area UV-to-visible broadband photodetector based on integrated lattice-matched Type II Se/n-Si heterojunctions10.1021/acs.nanolett.8b00988 ↗
13. Silicon surface passivation for silicon-colloidal quantum dot heterojunction photodetectors10.1021/acsnano.1c08002 ↗
14. Green-solvent-processed high-performance broadband organic photodetectors10.1021/acsami.3c09391 ↗
15. Recent progress in 2D inorganic/organic charge transfer heterojunction photodetectors10.1002/adfm.202205150 ↗
16. Development of high-performance organic photodetectors by understanding origin of dark current density with synthesis of photoconductive polymers10.1016/j.cej.2023.145178 ↗
17. Holistically optimizing charge carrier dynamics enables high-performance dye-sensitized solar cells and photodetectors10.1021/acsami.2c13009 ↗
18. Organic heptamethine salts for photovoltaics and detectors with near‐infrared photoresponse up to 1600 Nm10.1002/adom.201600102 ↗
19. Donor–acceptor polymers with tunable infrared photoresponse10.1039/C7PY00241F ↗
20. Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors10.1126/sciadv.adf6152 ↗
21. Optoelectronic synapses and photodetectors based on organic semiconductor/halide perovskite heterojunctions: materials, devices, and applications10.1002/adfm.202305508 ↗
22. Tuning of molecular aggregation and photoresponse of narrow-band organic photodetectors10.1021/acsaelm.3c00118 ↗
23. Slip‐stacked J‐aggregate materials for organic solar cells and photodetectors
24. Recent advances of BODIPY based derivatives for optoelectronic applications10.1016/j.ccr.2020.213462 ↗
25. BODIPY‐based semiconducting materials for organic bulk heterojunction photovoltaics and thin‐film transistors
26. Electrical and photoelectrical properties of Ag/n-Type Si metal/semiconductor contact with organic interlayer10.1016/j.tsf.2015.11.013 ↗
27. Simple BODIPY dyes as suitable electron-donors for organic bulk heterojunction photovoltaic cells10.1016/j.dyepig.2019.107842 ↗
28. Triarylamine-BODIPY derivatives: a promising building block as hole transporting materials for efficient perovskite solar cells10.1016/j.dyepig.2019.107690 ↗
29. The current transformer mechanism and structural properties of novel Al/BODIPY/pSi and Au/BODIPY/pSi heterojunctions10.1016/j.mssp.2021.105805 ↗
30. Electrical, photodiode, and DFT studies of newly synthesized π-conjugated BODIPY dye-based Au/BOD-Dim/n-Si device10.1016/j.physb.2021.413029 ↗
31. Design and development of a new pyrromethene dye with improved photostability and lasing efficiency: theoretical rationalization of photophysical and photochemical properties10.1021/jo702346s ↗
32. A BODIPY- O -glycoside based near-infrared fluorescent sensor for serum albumin10.1039/D1OB01564H ↗
33. High-efficiency Si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids10.1002/smll.201102095 ↗
34. Y. Wang R. Luo J. Ma S.-Q. Ma, Wang, Y.; Luo, R.; Ma, J.; Ma, S.-Q. Fabrication of the pyramidal microstructure on silicon substrate using KOH solution, in: Proceedings of the 2015 International Conference on Advanced Engineering Materials and Technology; Atlantis Press: Guangzhou, China, 2015. https://doi.org/10.2991/icaemt-15.2015.60.10.2991/icaemt-15.2015.60 ↗
35. Plasma texturing for silicon solar cells: from pyramids to inverted pyramids-like structures10.1016/j.solmat.2009.12.015 ↗
36. Optimization of textured structure on crystalline silicon wafer for heterojunction solar Cell10.1016/j.matchemphys.2011.12.052 ↗
37. Effect of pyramidal texturization on the optical surface reflectance of monocrystalline photovoltaic silicon wafers10.1016/j.ijleo.2018.07.116 ↗
38. Highly sensitive self‐powered 2D perovskite photodiodes with dual interface passivations10.1002/adfm.202210548 ↗
39. Nile red and nile blue: applications and syntheses of structural analogues10.1002/chem.201601570 ↗
40. Effect of surface texturing processes on the performance of crystalline silicon solar cell10.1016/j.solener.2016.12.010 ↗
41. Small molecule near-infrared boron dipyrromethene donors for organic tandem solar cells10.1021/jacs.7b07887 ↗
42. Electrical and photoelectrical characteristic investigation of a new generation photodiode based on bromothymol blue dye
43. The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors10.1016/j.mseb.2022.116036 ↗
44. Extraction of schottky diode parameters from forward current‐voltage characteristics10.1063/1.97359 ↗
45. Dye based photodiodes for solar energy applications10.1007/s00339-017-1221-x ↗
46. An investigation of the optoelectrical properties of N-TiO2Eu/p-Si heterojunction photodiode
47. Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
48. The Au/Cu2WSe4/p-Si photodiode: electrical and morphological characterization10.1016/j.jallcom.2018.11.372 ↗
49. Modification of Al/Si interface and schottky barrier height with chemical treatment10.1016/S0169-4332(01)00912-6 ↗
50. Optical and electrical characterization of a ZnO/coronene-based hybrid heterojunction photodiode10.1007/s11664-022-09910-2 ↗
51. On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods10.1016/j.microrel.2011.05.010 ↗
52. Achieving current rectification ratios ≥ 10 5 across thin films of coordination polymer10.1039/C9SC03733K ↗
53. Rectification mechanism of a P-type oxide-based metal–insulator–oxide semiconductor–metal thin-film diode10.1021/acsaelm.0c00789 ↗
54. A high rectification ratio nanocrystalline p–n junction diode prepared by metal-induced lateral crystallization for solar cell applications10.1149/1.2840618 ↗
55. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide schottky junction10.1515/nanoph-2016-0143 ↗
56. Accurate characterization of next-generation thin-film photodetectors10.1038/s41566-018-0288-z ↗
57. Enhancement of organic/inorganic hybrid photodetector based on pentacene/n-Si by surface plasmonic effect of gold and silver nanoparticles: a comparative study10.1016/j.optlastec.2020.106395 ↗
58. On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) Plots of Al/( %7 Zn-PVA)/p-Si (MPS) structure
59. The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky Barrier Diodes (SBDs)10.1016/j.mssp.2014.02.022 ↗
60. Band unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination10.1016/j.cplett.2008.09.035 ↗
61. Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid schottky diode
62. Electrical and fotoconducting characterization of Al/coumarin:ZnO/Al novel organic-inorganic hybrid photodiodes10.1016/j.jallcom.2019.03.090 ↗
63. Modeling capacitance–voltage characteristic of TiW/p-InP Schottky Barrier Diode10.1088/1674-1056/27/9/097203 ↗
64. Analysis of interface states of GaAs-rhodamine hybrid diode by Hill–Coleman Method10.1016/j.jpcs.2013.02.012 ↗
65. Tailoring the electrical characterization of epitaxialCuInGaSe2 thin film-based device for photodiode appliances10.1016/j.spmi.2020.106505 ↗
66. Photodiode based on Pb0.9Cd0.1S ternary alloy semiconductor for solar tracking systems
67. Analysis of interface states in Au/ZnO/p-InP (MOS) structure