Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film
Source abstract
Abstract
Integrated nanoelectromechanical systems (NEMS) exhibit enormous potential for replacing current microelectromechanical systems in various fields, such as 5G/6G wireless communication, in the future. However, their advancement is impeded by the challenge of achieving nanometer-thick ferroelectric oxide films with a high piezoelectric coefficient of d 33. Herein, the nm-thick flexible Hf 0.5Zr 0.5O 2 (HZO) films were deposited on mica substrates, and they exhibited a remnant polarization of ≥ 8.1 μC/cm 2 at 25–320 °C and a high d 33 value of 37.8 pC/N at 25 °C. After the HZO films with inter-digitated electrodes were fully polarized, the flexible HZO film with a dynamic bending strain of 0.102 % at 4 Hz produced an open-circuit voltage of 1.1 V. This HZO film with strong piezoelectricity can promote the development of novel NEMS and flexible piezoelectric sensors.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide10.1038/s41928-019-0305-3 ↗
2. Nanomechanical sensing using spins in diamond10.1021/acs.nanolett.6b04544 ↗
3. Next generation ferroelectric materials for semiconductor process integration and their applications10.1063/5.0037617 ↗
4. A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator10.1063/1.5134856 ↗
5. Fluorite-structured ferroelectric and antiferroelectric materials: a gateway of miniaturized electronic devices10.1002/adfm.202205606 ↗
6. Piezoelectric response of polycrystalline silicon-doped hafnium oxide thin films determined by rapid temperature cycles10.1002/aelm.201901015 ↗
7. Enhanced ferroelectricity in ultrathin films grown directly on silicon10.1038/s41586-020-2208-x ↗
8. Ionizing radiation effect on memory characteristics for hfO2-based ferroelectric field-effect transistors10.1109/LED.2019.2931826 ↗
9. Resolving mechanical properties and morphology evolution of free-standing ferroelectric Hf0.5Zr0.5O210.1002/adem.202170047 ↗
10. Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment10.1126/science.abk3195 ↗
11. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film10.1038/s41467-022-28236-5 ↗
12. The fundamentals and applications of ferroelectric HfO2 directly on silicon10.1038/s41578-022-00431-2 ↗
13. Review and perspective on ferroelectric HfO2-based thin films for memory applications10.1557/mrc.2018.175 ↗
14. Electrostrain in excess of 1 % in polycrystalline piezoelectrics10.1038/s41563-018-0060-2 ↗
15. Toward thick piezoelectric HfO2-based films10.1002/pssr.201900626 ↗
16. Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices10.1002/adfm.202002638 ↗
17. Epitaxial integration on Si (001) of ferroelectric Hf0.5Zr0.5O2 capacitors with high retention and endurance10.1021/acsami.8b18762 ↗
18. Intrinsic flexoelectricity of van der Waals epitaxial thin films10.1103/PhysRevB.106.024108 ↗
19. Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric10.1126/sciadv.aav3780 ↗
20. Flexible vibrational energy harvesting devices using strain-engineered perovskite piezoelectric thin films10.1016/j.nanoen.2018.10.068 ↗
21. Flexible PbZr0.52Ti0.48O3 capacitors with giant piezoelectric response and dielectric tunability10.1002/aelm.201600542 ↗
22. Ferroelectric order in van der Waals layered materials10.1038/s41578-022-00484-3 ↗
23. An overview of the development of flexible sensors10.1002/adma.201700375 ↗
24. Lab-on-skin: a review of flexible and stretchable electronics for wearable health monitoring10.1021/acsnano.7b04898 ↗
25. Excellent HZO ferroelectric thin films on flexible PET substrate10.1016/j.jallcom.2022.165872 ↗
26. Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD10.1063/1.5129318 ↗
27. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications10.1039/C8NR04734K ↗
28. Ferroelectric Hf0.5Zr0.5O2 films with improved endurance obtained through low temperature epitaxial growth on seed layers10.1039/D2NR05935E ↗
29. A rhombohedral ferroelectric phase in epitaxially strained Hf0. 5Zr0. 5O2 thin films10.1038/s41563-018-0196-0 ↗
30. Engineering ferroelectric Hf0.5Zr0.5O2 thin films by epitaxial stress10.1021/acsaelm.9b00256 ↗
31. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films10.1002/adma.201404531 ↗
32. Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors10.1038/s41699-021-00229-w ↗
33. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition10.1039/C6TC02003H ↗
34. Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory10.1039/C9NR05768D ↗
35. Enhancement of ferroelectricity and orientation in solutionderived hafnia thin films through heterogeneous grain nucleation10.1063/5.0045966 ↗
36. Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates10.1063/1.5031134 ↗
37. Flexible ferroelectric devices: status and applications10.1002/adfm.202205933 ↗
38. A fully integrated ferroelectric thin-film-transistor-influence of device scaling on threshold voltage compensation in displays10.1002/aelm.202100082 ↗
39. Evolution of the interfacial layer and its impact on electric-field-cycling behaviors in ferroelectric Hf1−xZrxO210.1021/acsami.1c22426 ↗
40. Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer10.1063/5.0064700 ↗
41. Growth window of ferroelectric epitaxial Hf0.5Zr0.5O2 thin films
42. Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer10.1063/1.4902072 ↗
43. Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices10.1016/j.actamat.2020.116515 ↗
44. Ferroelectric Hf0.5Zr0.5O2 thin films deposited epitaxially on (110)-oriented SrTiO310.1063/5.0075391 ↗
45. Measurement of piezoelectric coefficients of ferroelectric thin films10.1063/1.357693 ↗
46. Micro/nanostructure engineering of epitaxial piezoelectric α‑quartz thin films on silicon10.1021/acsami.9b18555 ↗
47. Triboelectric nanogenerator using multiferroic materials: an approach for energy harvesting and self-powered magnetic field detection10.1016/j.nanoen.2021.105964 ↗
48. Synergetic enhancement of energy harvesting performance in triboelectric nanogenerator using ferroelectric polarization for self-powered IR signaling and body activity monitoring10.1039/D0TA06215D ↗
49. High quality factors in superlattice ferroelectric Hf0.5Zr0.5O2 nanoelectromechanical resonators10.1021/acsami.2c08414 ↗
50. Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges10.3390/nano10081576 ↗
51. Genuinely ferroelectric sub-1-volt-switchable nanodomains in HfxZr(1−x)O2 ultrathin capacitors10.1021/acsami.8b07988 ↗
52. Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films10.1002/aelm.202200601 ↗
53. Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates10.1063/1.5031134 ↗
54. Enhanced energy density in sandwich-structured P(VDF-HFP) nanocomposites containing Hf0.5Zr0.5O2 nanofibers10.1016/j.cej.2021.131123 ↗