Electrical conductivity and effects of mechanical bending of flexible amorphous transparent conducting CdO-Ga2O3 films synthesized by room temperature sputtering
Source abstract
Abstract
Abstract Recently, amorphous ionic oxide semiconductors (AIOSs) have attracted much attention as materials for a wide range of next-generation flexible and transparent optoelectronic devices. Despite their amorphous nature, AIOSs are highly conducting due to their high mobility (>10 cm2/V-s) and electron concentration. Typically, they are grown at low temperature with large area uniformity, and hence are compatible with the fabrication of flexible and organic devices. In this study, we synthesize a new class of AIOS, CdO-Ga2O3 alloys on both glass and polyethylene terephthalate (PET) substrates by radio frequency magnetron sputtering at room temperature and explore their properties for flexible electronic applications. Our experimental results show that Cd1−xGaxO1+δ alloy films are amorphous with Ga content x>0.3 and within the amorphous composition range of 0.3
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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