Boron nitride and molybdenum disulfide as 2D composite element selectors with flexible threshold switching
Source abstract
Abstract
Abstract 2D composite nanomaterials of insulating boron nitride (BN) and semiconductor molybdenum disulfide (MoS2)-based flexible threshold switching selectors (Ag/BN+MoS2/Ag based on BM1 and BM2) are fabricated. Both selectors shown excellent bidirectional threshold switching characteristics. The assembled 1S1R unit comprising Ag/BN+MoS2/Ag based on BM1 selector and bipolar rewritable Ag/ZnO/Ag resistive switching memory shows the effectiveness of cross crosstalk suppression. The thermal conductivity of the functional layer based on BM2 decreasing to some extent with the content of BN decreasing, resulting in an increasing trend of Vhold compared with selector based on BM1. And the selectors of Ag/BN+MoS2/Ag based on BM2 were assembled with a unidirectional open WORM Ag/polyvinyl carbazole/Ag memory, it also shows a good effect in restraining the crosstalk. It has large developmental potentiality in flexible 2D composite nanomaterials threshold switching selector to restrain the crosstalk issue for a large RRAM array.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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