Room-temperature stable CsPbI3 perovskite quantum dots prepared by layer-by-layer assembly for photonic synapse
Source abstract
Abstract
CsPbX 3 (X = I, Br, or Cl) perovskite materials have attracted great interest due to versatile and excellent photoelectric properties, applicable to various devices ranging from memory to solar cells. In particular, the cubic phase of CsPbI 3 perovskite has a band gap of 1.73 eV, absorbing most of the visible region. However, despite excellent material properties, it is still difficult to apply to devices due to the unstable crystalline phase of CsPbI 3 at room temperature. To overcome this shortcoming, we fabricated a cubic CsPbI 3 perovskite quantum dots (CsPbI 3 -PQDs) thin film using in- situ ligand exchange layer-by-layer self-assembly (LbL SA). These room-temperature stable CsPbI 3-PQDs thin films could control not only the thickness in nano-scale, but also the electrical properties. For device application, CsPbI 3-PQD was formed on the fluorine doped tin oxide (FTO) substrate by LbL SA method, and W/CsPbI 3 -PQD/FTO photonic synapse was fabricated and evaluated. This photonic synapse exhibited photo-sensitive current-voltage characteristics under various UV stimuli such as intensity, exposure time, and interval. Furthermore, we successfully emulated the essential synaptic behaviors induced by photonic stimulus including short term plasticity, long term plasticity, and paired pulse facilitation. The CsPbI 3 -PQD-based device exhibited resistive switching characteristics with R on/R off of 10 3, stable endurance (10 3 cycles) and retention time (∼ 9 ×10 3 s). Additionally, we fabricated a heterojunction CsPbI 3-PQD/a-IGZO based synaptic device and improved synaptic behaviors under various visible stimuli by enhancing the maintenance capability of photogenerated charge carriers through energy band engineering.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Perovskite Materials and Applications · Advanced Memory and Neural Computing · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (66)
Show source-provided references
1. Experimental demonstration and tolerancing of a large-scale neural network (165 000 synapses) using phase-change memory as the synaptic weight element10.1109/TED.2015.2439635 ↗
2. Optimization of conductance change in Pr 1–x Ca x MnO 3-based synaptic devices for neuromorphic systems10.1109/LED.2015.2418342 ↗
3. HfZrO x-based ferroelectric synapse device with 32 levels of conductance states for neuromorphic applications10.1109/LED.2017.2698083 ↗
4. Optoelectronic synapse based on IGZO‐alkylated graphene oxide hybrid structure10.1002/adfm.201804397 ↗
5. An artificial neuron based on a threshold switching memristor10.1109/LED.2017.2782752 ↗
6. L. Shi, J. Pei, N. Deng, D. Wang, L. Deng, Y. Wang, Y. Zhang, F. Chen, M. Zhao, S. Song, Development of a Neuromorphic Computing System. IEEE International Electron Devices Meeting (IEDM) 2015, 4.3. 1–4.3. 4.10.1109/IEDM.2015.7409624 ↗
7. T. Titirsha, S. Song, A. Balaji, A. Das, On the role of system software in energy management of neuromorphic computing, in: Proceedings of the Eighteenth ACM International Conference on Computing Frontiers 2021, 124–132.10.1145/3457388.3458664 ↗
8. Performance comparison of the digital neuromorphic hardware SpiNNaker and the neural network simulation software NEST for a full-scale cortical microcircuit model10.3389/fnins.2018.00291 ↗
9. Synaptic electronics: materials, devices and applications10.1088/0957-4484/24/38/382001 ↗
10. Competitive Hebbian learning through spike-timing-dependent synaptic plasticity10.1038/78829 ↗
11. An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems10.1039/C9NR04195H ↗
12. Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface10.1016/j.jallcom.2019.05.114 ↗
13. two-terminal artificial synapse with hybrid organic–inorganic perovskite (CH3NH3) PbI3 and low operating power energy (∼ 47 fJ/μm2)10.1016/j.jallcom.2020.155064 ↗
14. Retina‐inspired carbon nitride‐based photonic synapses for selective detection of UV light
15. Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses
16. Organic and hybrid resistive switching materials and devices10.1039/C8CS00614H ↗
17. Memristive synapses with high reproducibility for flexible neuromorphic networks based on biological nanocomposites10.1039/C9NR08001E ↗
18. Flexible artificial nociceptor using a biopolymer-based forming-free memristor10.1039/C8NR08721K ↗
19. Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing10.1016/j.nanoen.2018.08.018 ↗
20. Synaptic silicon-nanocrystal phototransistors for neuromorphic computing10.1016/j.nanoen.2019.103859 ↗
21. Enhanced photoluminescence and solar cell performance via Lewis base passivation of organic–inorganic lead halide perovskites10.1021/nn5036476 ↗
22. Investigation of CH3NH3PbI3 degradation rates and mechanisms in controlled humidity environments using in situ techniques10.1021/nn506864k ↗
23. Degradation observations of encapsulated planar CH 3 NH 3 PbI 3 perovskite solar cells at high temperatures and humidity10.1039/C5TA00358J ↗
24. Encapsulating perovskite quantum dots in iron‐based metal–organic frameworks (MOFs) for efficient photocatalytic CO2 reduction10.1002/anie.201904537 ↗
25. Inorganic caesium lead iodide perovskite solar cells10.1039/C5TA06398A ↗
26. Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties10.1021/ic401215x ↗
27. Crystal structure and photoconductivity of caesium plumbohalides10.1038/1821436a0 ↗
28. Quantitative phase-change thermodynamics and metastability of perovskite-phase cesium lead iodide10.1021/acs.jpclett.7b00134 ↗
29. Surface passivation engineering strategy to fully-inorganic cubic CsPbI 3 perovskites for high-performance solar cells
30. Influence of the substrate on the bulk properties of hybrid lead halide perovskite films10.1039/C6TA08695K ↗
31. Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells
32. Semiconductor quantum dots for memories and neuromorphic computing systems10.1021/acs.chemrev.9b00730 ↗
33. Recent progress of quantum dot‐based photonic devices and systems: a comprehensive review of materials, devices, and applications10.1002/sstr.202000024 ↗
34. Hydrophobic stabilizer-anchored fully inorganic perovskite quantum dots enhance moisture resistance and photovoltaic performance10.1016/j.nanoen.2020.104985 ↗
35. Monodisperse perovskite colloidal quantum dots enable high-efficiency photovoltaics10.1021/acsenergylett.1c00462 ↗
36. CsPbI3 perovskite quantum dot solar cells with both high efficiency and phase stability enabled by Br doping
37. Quantum dot–induced phase stabilization of α-CsPbI3 perovskite for high-efficiency photovoltaics10.1126/science.aag2700 ↗
38. Alkali acetate-assisted enhanced electronic coupling in CsPbI3 perovskite quantum dot solids for improved photovoltaics10.1016/j.nanoen.2019.104130 ↗
39. High‐efficiency PbS quantum‐dot solar cells with greatly simplified fabrication processing via “Solvent‐Curing10.1002/adma.201707572 ↗
40. Applying UV–Vis spectroscopy to step-by-step molecular self assembly on surface: does it bring pertinent information?10.1016/j.tsf.2007.07.137 ↗
41. Electronic coupling and exciton energy transfer in CdTe10.1021/ja061608w ↗
42. Carrier transfer and thermal escape in CdTe/ZnTe quantum dots10.1364/OE.22.004115 ↗
43. Discrete states and carrier-phonon scattering in quantum dot population dynamics10.1038/srep08267 ↗
44. The origin of CBRAM with high linearity, on/off ratio, and state number for neuromorphic computing10.1109/TED.2021.3065013 ↗
45. S. Yu, P.-Y. Chen, Y. Cao, L. Xia, Y. Wang, H. Wu, Scaling-up Resistive Synaptic Arrays for Neuro-inspired Architecture: Challenges and Prospect IEEE International Electron Devices Meeting (IEDM) 2015, 17.13. 11–17.13. 14.10.1109/IEDM.2015.7409718 ↗
46. The molecular biology of memory storage: a dialogue between genes and synapses10.1126/science.1067020 ↗
47. Organic core-sheath nanowire artificial synapses with femtojoule energy consumption10.1126/sciadv.1501326 ↗
48. Determinants of the time course of facilitation at the granule cell to Purkinje cell synapse10.1523/JNEUROSCI.16-18-05661.1996 ↗
49. Biorealistic implementation of synaptic functions with oxide memristors through internal ionic dynamics10.1002/adfm.201501427 ↗
50. Short-term synaptic plasticity10.1146/annurev.physiol.64.092501.114547 ↗
51. Flexible hybrid organic–inorganic perovskite memory10.1021/acsnano.6b01643 ↗
52. Resistive switching properties through iodine migrations of a hybrid perovskite insulating layer10.1002/admi.201601035 ↗
53. Bipolar resistive switching behavior of La0. 5Sr0. 5CoO3− σ films for nonvolatile memory applications10.1063/1.4881720 ↗
54. Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors10.1016/j.jallcom.2017.11.267 ↗
55. Flexible organic bistable devices based on graphene embedded in an insulating poly (methyl methacrylate) polymer layer10.1021/nl1006036 ↗
56. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application10.1021/nl900006g ↗
57. Visible-light stimulated synaptic plasticity in amorphous indium-gallium-zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications
58. A visible light detector based on a heterojunction phototransistor with a highly stable inorganic CsPbI x Br 3− x perovskite and In–Ga–Zn–O semiconductor double-layer10.1039/C9TC04757C ↗
59. Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications10.1016/j.ssel.2020.10.001 ↗
60. Y. Wang, L. Xu, M.-C. Lin, T.-C. Leung, Local work functions of clean tungsten surfaces under electric fields based on ab initio calculations, in: Proceedings of the IEEE International Vacuum Electronics Conference (IVEC) 2019, 1–2.10.1109/IVEC.2019.8744864 ↗
61. Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO 2/p-Si (100) MIS devices10.1007/s00339-016-0569-7 ↗
62. High efficiency perovskite quantum dot solar cells with charge separating heterostructure10.1038/s41467-019-10856-z ↗
63. Influence of source and drain contacts on the properties of indium–gallium–zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer10.1021/am5079682 ↗
64. Photoelectric plasticity in oxide thin film transistors with tunable synaptic functions
65. ,Large-area patterning of full-color quantum dot arrays beyond 1000 pixels per inch by selective electrophoretic deposition
66. Reversible 3D laser printing of perovskite quantum dots inside a transparent medium10.1038/s41566-019-0538-8 ↗