Ultra-high energy storage performance in Bi5Mg0.5Ti3.5O15 film via a low temperature-induced ergodic relaxation state
Source abstract
Abstract
Good low-temperature energy storage characteristics are conducive to the successful merger of Si-based semiconductor technology with dielectric energy storage films. Due to low maximum polarization intensity and poor crystallinity at low temperatures, however, it is difficult for dielectric energy storage films to attain excellent dielectric energy storage properties. Herein, Bi 5Mg 0.5Ti 3.5O 15 films accomplish the shift from a non-ergodic relaxor state to an ergodic relaxation state by lowering the annealing temperature, which simultaneously increases insulating characteristics. The energy loss is reduced while maintaining a high polarization intensity and high breakdown electric field, which results in the ultra-high energy storage density (122.2 J/cm 3) and efficiency (77.3 %) of the Bi 5Mg 0.5Ti 3.5O 15 film at an annealing temperature of 500 °C. Meanwhile, the Bi 5Mg 0.5Ti 3.5O 15 films show excellent stability in terms of temperature (−20 °C to 150 °C), frequency (0.05 kHz–20 kHz), and fatigue resistance (1 ×10 8 ). The domain states and insulation properties of temperature-controlled films are used in this work to achieve ultra-high energy storage properties, and a concise and feasible scheme for the application of low temperature energy storage films in semiconductor technology is provided.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Dielectric materials and actuators · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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