An Explanation for High Defect Tolerance in Metal Halide Perovskite Quantum Dots

An Auger‐like process assisted by quantum defects in metal halide perovskite quantum dots is proposed, where a charge carrier in the ground state of the quantum dot is trapped by quantum defects, resulting in a charge carrier defect being excited simultaneously and returning to the ground state of the quantum dot. It is found that the lifetime of the whole process varies from femtosecond to picosecond, depending on the radius of the quantum dot and the depth of the defect within the bandgap. Moreover, the lifetime is independent of the species of the defects, which is in good agreement with the recent theoretical prediction using ab initio non‐adiabatic molecular dynamics simulation. This Auger‐like process may provide a potential explanation of the high defect tolerance in metal halide perovskite materials.