Enhancing interfacial polarization through construction of semiconductor heterointerfaces in MoS2/CuS hollow microspheres for microwave absorption

It is feasible and effective to regulate the impedance matching of materials by constructing heterogeneous interfaces. Besides, materials with adjustable morphology such as hollow structure can improve the capacity to absorb microwave. Therefore, in this work, MoS ₂/CuS heterojunctions with hollow structure have been prepared by a simple one-step hydrothermal approach. By varying the quantity of cetyltrimethyl ammonium bromide (CTAB), the composite’s shape and structure may be modified. The results manifest that the existence of defects, lamellar and heterogeneous structures is conducive to improve the polarization and impedance matching of materials. In addition, the introduction of hollow structure can not only reduce the weight of the material, but also significantly improve the microwave absorbing abilities of the MoS ₂/CuS composite. Also, such metal-sulfide semiconductor junctions lead to the formation of a built-in electric field, which can hugely enhance the absorbing properties synergizing with other dielectric polarization mechanisms. For MoS ₂/CuS-1 sample, the minimum reflection loss (RL _min) can reach up to −64.01 dB when the thickness is 2.39 mm, and the broadest effective absorbing bandwidth (EAB) is 5.64 GHz at 2.22 mm. This work puts up a simple and useful method to synthesize hollow structural materials with heterojunctions and plumbs the influence of modified morphology on the microwave absorbing performance of materials.