In-situ preparation of N-doped Bi0/OVs-BiVO4 photocatalysts with enhanced photocatalytic properties
Source abstract
Abstract
Elemental doping, noble metal deposition and defect engineering have proven to be effective strategies to enhance the photogenerated charge pairs separation behavior of semiconductor materials and ameliorate their photocatalytic performance. In this study, N-doped Bi 0/OVs-BiVO 4 photocatalysts were constructed in-situ by calcining BiVO 4 precursors under a hydrogen/nitrogen atmosphere. The experimental results demonstrate the successful reduction and loading of Bi 0 onto the BiVO 4 surface and the introduction of N doing and oxygen vacancies (OVs). The optical absorption range of BiVO 4 is broadened by the synergistic effect of the surface plasmon resonance (SPR) effect of Bi 0 , N-doping and OVs, inducing enhanced separation efficiency of the photoinduced carriers. The photocatalytic degradation rate constant of Rhodamine B (RhB) on samples treated with a hydrogen/nitrogen atmosphere for 10 min under simulated sunlight irradiation is 4.8 times better than that on the blank BiVO 4. The enhanced photocatalytic performance of N-doped Bi 0/OVs-BiVO 4 originates from the synergistic effect of SPR effect of Bi 0 , N-doping and OVs. This work highlights that the improvement of BiVO 4 photocatalytic property can be achieved by calcining BiVO 4 under a hydrogen/nitrogen mixed atmosphere.
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Research context
OpenAlex topics: Advanced Photocatalysis Techniques · Gas Sensing Nanomaterials and Sensors · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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