Room Temperature Evidence of PtTe 2 Topological Semimetal Character
Source abstract
Abstract
Topological semimetals, being characterized by symmetry‐protected band crossings, represent a fascinating class of materials with extraordinary electronic properties. Type‐II Dirac semimetals, featuring highly tilted Dirac cones, offer unique opportunities for both fundamental research and technological advancements. Platinum ditelluride (PtTe 2 ) has emerged as a promising candidate for a type‐II Dirac semimetal, exhibiting relevant properties for future spintronic and optoelectronic devices. While the existence of type‐II Dirac cones in PtTe 2 has been confirmed by cryogenic temperature angle‐resolved photoemission spectroscopy (ARPES), practical applications necessitate their stability at ambient conditions. Here, we present a melt growth method for the synthesis of high‐quality PtTe 2 crystals and we perform ARPES characterization both at cryogenic and at room temperature, providing compelling evidence for the robust nature of its topological electronic structure under realistic operating conditions. This demonstration paves the way for the development of PtTe 2 ‐based devices leveraging its distinctive topological properties in practical settings.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Consiglio Nazionale delle Ricerche (CNR) ‐ Istituto per la Microelettronica e Microsistemi (IMM) Agrate Brianza Italy
Consiglio Nazionale delle Ricerche (CNR) ‐ Istituto Officina dei Materiali (IOM) Basovizza Italy
Department of Inorganic Chemistry University of Chemistry and Technology Prague Prague Czech Republic
Consiglio Nazionale delle Ricerche (CNR) ‐ Istituto di Struttura della Materia (ISM) Trieste Italy
Funding
MUR
References (28)
Show source-provided references
1. 10.1088/0034‐4885/75/9/09650110.1088/0034‐4885/75/9/096501 ↗
2. 10.1038/s41586‐019‐0954‐410.1038/s41586‐019‐0954‐4 ↗
3. 10.1146/annurev‐conmatphys‐062910‐14053810.1146/annurev‐conmatphys‐062910‐140538 ↗
4. 10.1038/nature0891610.1038/nature08916 ↗
5. 10.1088/1361‐6633/aa6ac710.1088/1361‐6633/aa6ac7 ↗
6. 10.1038/nmat478810.1038/nmat4788 ↗
7. 10.1038/nphys337210.1038/nphys3372 ↗
8. 10.1038/nmat414310.1038/nmat4143 ↗
9. 10.1038/s41467‐020‐17174‐910.1038/s41467‐020‐17174‐9 ↗
10. 10.1016/j.apmt.2020.10073210.1016/j.apmt.2020.100732 ↗
11. 10.1002/adma.20240055410.1002/adma.202400554 ↗
12. 10.1146/annurev‐conmatphys‐031016‐02545810.1146/annurev‐conmatphys‐031016‐025458 ↗
13. 10.1103/RevModPhys.90.01500110.1103/RevModPhys.90.015001 ↗
14. 10.1088/1674‐1056/25/11/11710610.1088/1674‐1056/25/11/117106 ↗
15. 10.1002/adma.20210979610.1002/adma.202109796 ↗
16. 10.1002/inf2.1255510.1002/inf2.12555 ↗
17. 10.1038/s41699‐020‐0152‐010.1038/s41699‐020‐0152‐0 ↗
18. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
19. 10.1021/acs.nanolett.8b0058310.1021/acs.nanolett.8b00583 ↗
20. 10.1038/s41467‐017‐00280‐610.1038/s41467‐017‐00280‐6 ↗
21. 10.1016/j.scib.2019.05.02310.1016/j.scib.2019.05.023 ↗
22. 10.1021/acsnano.4c0286310.1021/acsnano.4c02863 ↗
23. 10.1103/PhysRevB.110.19542910.1103/PhysRevB.110.195429 ↗
24. 10.1103/PhysRevB.96.24140810.1103/PhysRevB.96.241408 ↗
25. 10.1021/acs.nanolett.3c0498610.1021/acs.nanolett.3c04986 ↗
26. 10.1002/adma.20200441210.1002/adma.202004412 ↗
27. 10.1063/5.024459110.1063/5.0244591 ↗
28. 10.1002/adfm.20170650410.1002/adfm.201706504 ↗