Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection
Source abstract
Abstract
Abstract Here we report a novel ZnO microtubular homojunction photodiode (PD) fabricated by optical vapor supersaturated precipitation (OVSP) and sputtering methods. The acceptor-rich ZnO (A-ZnO) microtube grown by OVSP possesses a great UV–visible rejection ratio of ~3.77 and a high external quantum yield of 1.4 × 103%. The formed A-ZnO/n-ZnO homojunction UV-PD realizes an ultrafast photoresponse down to 6 ms (three orders of magnitude faster) and boosts the sensitivity by 2.6-folds with respect to the bare A-ZnO microtube. It is beneficial for weak-signal UV detection down to the threshold of 0.4 mW/cm2 under random excitation conditions, by which the detectivity up to 6.67 × 1012 cmHz1/2/W is achieved. The ZnO microtubular homojunction paves a new way for design of high-performance wide-bandgap semiconductor UV-PDs, promoting their practical applications in future.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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