DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2013-04

Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3gate dielectrics grown at room temperature

Hsiao‐Hsuan Hsu, Chun‐Yen Chang, Chun‐Hu Cheng

physica status solidi (RRL) – Rapid Research Letters· Volume 7· Issue 4
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Source abstract

Abstract

Abstract In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y2O3/TiO2/Y2O3gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a largeIon/Ioffratio of 1.7 × 106. The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐κTiO2and large band gap Y2O3, which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics. magnified image (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context

Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · ZnO doping and properties

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References (26)

Show source-provided references
1. 10.1002/adma.20120068310.1002/adma.201200683 ↗
2. 10.1063/1.357840310.1063/1.3578403 ↗
3. S. I.Kim C. J.Kim J. C.Park I.Song D. H.Kang H.Lim S. W.Kim E.Lee J. C.Lee andY.Park in:International Electron Devices Meeting Washington DC USA 2007 pp. 583–586.10.1109/IEDM.2007.4419006 ↗
4. 10.1109/TED.2008.91671710.1109/TED.2008.916717 ↗
5. C. J.Kim D.Kang I.Song J. C.Park H.Lim S.Kim E.Lee R.Chung J. C.Lee andY.Park in:International Electron Devices Meeting San Francisco USA 2006 pp. 307–310.
6. 10.1063/1.274279010.1063/1.2742790 ↗
7. A.Suresh P.Wellenius andJ. F.Muth in:International Electron Devices Meeting Washington DC USA 2007 pp. 587–590.10.1109/IEDM.2007.4419007 ↗
8. 10.1126/science.283.5403.82210.1126/science.283.5403.822 ↗
9. 10.1002/adma.20040080910.1002/adma.200400809 ↗
10. 10.1002/adma.20100294610.1002/adma.201002946 ↗
11. 10.1016/j.tsf.2007.03.08810.1016/j.tsf.2007.03.088 ↗
12. 10.1109/LED.2008.200083310.1109/LED.2008.2000833 ↗
13. 10.1063/1.136106510.1063/1.1361065 ↗
14. 10.1016/S0022-3093(02)00972-910.1016/S0022-3093(02)00972-9 ↗
15. 10.1021/cm05062410.1021/cm050624 ↗
16. 10.1016/S0169-4332(99)00269-X10.1016/S0169-4332(99)00269-X ↗
17. 10.1063/1.318753210.1063/1.3187532 ↗
18. 10.1109/LED.2011.217080910.1109/LED.2011.2170809 ↗
19. 10.1063/1.330975310.1063/1.3309753 ↗
20. Pearton S. J. · Proc. SPIE · 2010 · 7603 · 760
21. 10.1063/1.297595910.1063/1.2975959 ↗
22. 10.1016/j.tsf.2007.03.16110.1016/j.tsf.2007.03.161 ↗
23. 10.1149/1.309840510.1149/1.3098405 ↗
24. 10.1063/1.235381110.1063/1.2353811 ↗
25. 10.1149/1.321604910.1149/1.3216049 ↗
26. 10.1002/adma.20110322810.1002/adma.201103228 ↗