HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam
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Abstract
Abstract We show that HfO2/AlGaN/GaN structures with HfO2 layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO2 was found εHfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10–4 A/cm2 at the threshold voltage. The comparison of the losses in the samples with and without HfO2 indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Advancements in Semiconductor Devices and Circuit Design
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References (11)
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